THE DEFINITIVE GUIDE TO BARE DIE SIC SCHOTTKY DIODES

The Definitive Guide to Bare Die SiC Schottky diodes

78 and 1.sixteen V. These values, derived from place temperature I–V measurements, are claimed in Figure 12b. As one can see, the Schottky barrier peak depends upon the amorphous layer thickness and thermal annealing period. Precisely, even though a slight influence on the amorphous layer thickness was noticed around the Schottky barrier price, t

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